Direct determination of the absolute electron density of nanostructured and disordered materials at sub-10-nm resolution

被引：38

作者：

Miao, J ^{[1
]}

Amonette, JE

Nishino, Y

Ishikawa, T

Hodgson, KO

机构：

[1] Stanford Univ, Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA

[2] Pacific NW Natl Lab, Richland, WA 99352 USA

[3] SPring 8, RIKEN, Mikazuki, Hyogo 6795148, Japan

[4] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.68.012201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the development of a novel experimental approach to the direct determination of the absolute electron density of nanostructured and disordered materials. By calibrating the incident coherent x-ray flux and the diffraction pattern intensity and using the oversampling method, we have directly determined the absolute electron density of a porous silica particle at similar to9-nm resolution. This general approach can be used for the quantitative characterization of nanocrystals and noncrystalline materials at nanometer or better resolution.

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