Correlation between structure and optoelectronic properties of undoped microcrystalline silicon

被引：31

作者：

Siebke, F

Yata, S

Hishikawa, Y

Tanaka, M

机构：

[1] Forschungszentrum Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

[2] Sanyo Elect Co Ltd, New Mat Res Ctr, Hirakata, Osaka 573, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

silicon; nanocrystalline materials; optical properties; electric properties; structure;

D O I：

10.1016/S0022-3093(98)00261-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The correlation between crystallinity and optoelectronic properties of undoped microcrystalline silicon is investigated. The use of the constant photocurrent method for measurement of microcrystalline silicon is discussed. This method measures the true absorption coefficient only if the crystallinity is a major fraction of a sample. If the crystalline volume fraction is less, it underestimates the absorption coefficient at smaller photon energies. At these energies, carriers are mainly photogenerated in the crystalline phase. Carriers generated in isolated grains contribute less to the photocurrent than carriers generated in grains which are embedded in percolation paths. The shape of constant photocurrent method spectra of microcrystalline silicon with a poor crystallinity differs from spectra of material with better crystallinity. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：977 / 981

页数：5

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