CHARACTERIZATION OF THE DEFECT DENSITY AND BAND TAIL OF AN A-SI-H I-LAYER FOR SOLAR-CELLS BY IMPROVED CPM MEASUREMENTS

被引：23

作者：

SASAKI, M

OKAMOTO, S

HISHIKAWA, Y

TSUDA, S

NAKANO, S

机构：

[1] Functional Materials Research Center, SANYO Electric Co., Ltd., Hirakata, Osaka, 573

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90083-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A new CPM (Constant Photocurrent Method) system, which improves the accuracy of measurement by suppressing the effect of optical interference, has been developed. This system enables determination of the defect density (N-d) and the slope of the Urbach tail (E(ch)) of a-Si:H films for solar cells with improved accuracy. The system has shown that N-d and E(ch) are minimized when E(opt) = 1.55-1.61 eV. Here, E(opt) is the optical gap determined from (ahv)(1/3) versus hv plots. The conversion efficiency of a-Si:H solar cells can be optimized by using the i-layer in this range of E(opt).

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页码：541 / 547

页数：7

相关论文

共 10 条

[1] CORRECTIONS TO THE CONSTANT PHOTOCONDUCTIVITY METHOD FOR DETERMINING DEFECT DENSITIES, WITH APPLICATION TO AMORPHOUS-SILICON [J].

BUBE, RH ;

BENATAR, LE ;

GRIMBERGEN, MN ;

REDFIELD, D .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (12) :5766-5777

[2] LIGHT-SCATTERING EFFECTS IN CPM AND PDS MEASUREMENT ON A-SI-H FILMS [J].

FAVRE, M ;

CURTINS, H ;

VANECEK, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :405-407

[3] PRINCIPLES FOR CONTROLLING THE OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED FROM A SILANE PLASMA [J].

HISHIKAWA, Y ;

TSUDA, S ;

WAKISAKA, K ;

KUWANO, Y .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) :4227-4231

[4] INTERFERENCE-FREE DETERMINATION OF THE OPTICAL-ABSORPTION COEFFICIENT AND THE OPTICAL GAP OF AMORPHOUS-SILICON THIN-FILMS [J].

HISHIKAWA, Y ;

NAKAMURA, N ;

TSUDA, S ;

NAKANO, S ;

KISHI, Y ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :1008-1014

[5] EFFECT OF SUBSTRATES AND FILM THICKNESS ON THE STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].

HISHIKAWA, Y ;

TSUGE, S ;

NAKAMURA, N ;

TSUDA, S ;

NAKANO, S ;

KUWANO, Y .

APPLIED PHYSICS LETTERS, 1990, 57 (08) :771-773

[6]

HISHIKAWA Y, 1993, IN PRESS 1993 MRS SP

[7]

HISHIKAWA Y, 1993, 7TH P PHOT SCI ENG C

[8] INTRINSIC DANGLING-BOND DENSITY IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW B, 1985, 32 (08) :5510-5513

[9] PREPARATION AND PROPERTIES OF HIGH-QUALITY A-SI FILMS WITH A SUPER CHAMBER (SEPARATED ULTRAHIGH-VACUUM REACTION CHAMBER) [J].

TSUDA, S ;

TAKAHAMA, T ;

ISOMURA, M ;

TARUI, H ;

NAKASHIMA, Y ;

HISHIKAWA, Y ;

NAKAMURA, N ;

MATSUOKA, T ;

NISHIWAKI, H ;

NAKANO, S ;

OHNISHI, M ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01) :33-38

[10] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H [J].

VANECEK, M ;

KOCKA, J ;

STUCHLIK, J ;

KOZISEK, Z ;

STIKA, O ;

TRISKA, A .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :411-423