LIGHT-SCATTERING EFFECTS IN CPM AND PDS MEASUREMENT ON A-SI-H FILMS

被引：10

作者：

FAVRE, M ^{[1
]}

CURTINS, H ^{[1
]}

VANECEK, M ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1016/0022-3093(89)90599-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：405 / 407

页数：3

共 3 条

[1] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[2] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H
VANECEK, M
KOCKA, J
STUCHLIK, J
KOZISEK, Z
STIKA, O
TRISKA, A
[J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 411 - 423
[3] PHOTOTHERMAL SPECTROSCOPY OF SCATTERING MEDIA
YASA, ZA
JACKSON, WB
AMER, NM
[J]. APPLIED OPTICS, 1982, 21 (01): : 21 - 31