EFFECT OF SUBSTRATES AND FILM THICKNESS ON THE STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON FILMS

被引：23

作者：

HISHIKAWA, Y

TSUGE, S

NAKAMURA, N

TSUDA, S

NAKANO, S

KUWANO, Y

机构：

[1] SANYO Electric Company Ltd., Functional Materials Research Center, Hirakata, Osaka 573

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) films have been deposited on different substrates by a plasma chemical vapor deposition method. Raman spectra of the a-Si:H films are significantly dependent on the material of the substrate (glass, crystalline silicon, and stainless steel). The spectra are also dependent on the thickness of the films. The experimental results indicate that the silicon network structure of a-Si:H films is dependent on the material of the substrate. The dependence of the optical absorption coefficient and electric conductivities on the thickness is also reported.

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页码：771 / 773

页数：3

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