共 13 条
[2]
BREGMAN J, 1989, J VAC SCI TECHNOL A, V7, P2632
[3]
THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .1. DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY
[J].
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES,
1984, 49 (05)
:511-519
[4]
INCORPORATION OF CONSTITUENT ATOMS OF TRANSPARENT CONDUCTIVE FILMS INTO HYDROGENATED AMORPHOUS-SILICON VIA GAS-PHASE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1988, 27 (08)
:L1395-L1397
[5]
RAMAN-STUDY ON THE SILICON NETWORK OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY A GLOW-DISCHARGE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1985, 24 (04)
:385-389
[7]
HISHIKAWA Y, 1980, 9TH P EUR PHOT SOL E, V35, P255
[8]
JAMES YG, 1988, SOL CELLS, V23, P191
[10]
LANNIN JS, 1984, SEMICONDUCT SEMIMET, V21, P159