RAMAN-STUDY ON THE SILICON NETWORK OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY A GLOW-DISCHARGE

被引：35

作者：

HISHIKAWA, Y

WATANABE, K

TSUDA, S

OHNISHI, M

KUWANO, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 04期

关键词：

D O I：

10.1143/JJAP.24.385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：385 / 389

页数：5

共 8 条

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