RAMAN STUDIES ON LOCAL STRUCTURAL DISORDER IN SILICON-BASED AMORPHOUS-SEMICONDUCTOR FILMS

[1] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 405 - 419

[2] RAMAN-SCATTERING IN HYDROGENATED AMORPHOUS-SILICON UNDER HIGH-PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (03) : 197 - 200

[3] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[4] LANNIN JS, 1982, PHYS REV B, V26, P3506, DOI 10.1103/PhysRevB.26.3506

[5] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121

[6] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305

[7] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836

[8] MORIMOTO A, 1983, JPN J APPL PHYS, V22

[9] NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03): : L176 - L178

[10] TOPOLOGY OF COVALENT NON-CRYSTALLINE SOLIDS .1. SHORT-RANGE ORDER IN CHALCOGENIDE ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (02) : 153 - 181

[1] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) : 405 - 419

[2] RAMAN-SCATTERING IN HYDROGENATED AMORPHOUS-SILICON UNDER HIGH-PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1982, 42 (03) : 197 - 200

[3] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[4] LANNIN JS, 1982, PHYS REV B, V26, P3506, DOI 10.1103/PhysRevB.26.3506

[5] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121

[6] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305

[7] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L833 - L836

[8] MORIMOTO A, 1983, JPN J APPL PHYS, V22

[9] NMR AND IR STUDIES ON HYDROGENATED AMORPHOUS SI1-XCX FILMS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (03): : L176 - L178

[10] TOPOLOGY OF COVALENT NON-CRYSTALLINE SOLIDS .1. SHORT-RANGE ORDER IN CHALCOGENIDE ALLOYS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (02) : 153 - 181