ORDER PARAMETERS IN A-SI SYSTEMS

[1] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 81 - 84

[2] NUCLEATION AND GROWTH-RATE OF ALPHA-SI ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 90 - 92

[3] KSHIRSAGAR ST, 1981, P INT C PHONON PHYS

[4] VIBRATIONAL-SPECTRA AND TOPOLOGICAL STRUCTURE OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 897 - 908

[5] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[6] Paul W., 1973, ADV PHYS, V22, P529

[7] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (11) : 642 - &

[8] MULTIPHONON RAMAN-SPECTRUM OF SILICON [J]. PHYSICAL REVIEW B, 1973, 7 (08): : 3685 - 3697

[9] Thorpe M. F., COMMUNICATION

[10] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 534 - 535

[1] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 81 - 84

[2] NUCLEATION AND GROWTH-RATE OF ALPHA-SI ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 90 - 92

[3] KSHIRSAGAR ST, 1981, P INT C PHONON PHYS

[4] VIBRATIONAL-SPECTRA AND TOPOLOGICAL STRUCTURE OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 897 - 908

[5] EVIDENCE OF VOIDS WITHIN AS-DEPOSITED STRUCTURE OF GLASSY SILICON [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (20) : 1167 - &

[6] Paul W., 1973, ADV PHYS, V22, P529

[7] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (11) : 642 - &

[8] MULTIPHONON RAMAN-SPECTRUM OF SILICON [J]. PHYSICAL REVIEW B, 1973, 7 (08): : 3685 - 3697

[9] Thorpe M. F., COMMUNICATION

[10] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 534 - 535