COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON

[1] BARNA A, 1976, STRUCTURE EXCITATION, P199

[2] BARNA A, 1974, 5TH P INT C AM LIQ S, V1, P109

[3] BARNA A, 1976, P INT C AMORPHOUS LI

[4] INFLUENCE OF EVAPORATION PARAMETERS ON ELECTRICAL PROPERTIES OF AMORPHOUS-GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 511 - 520

[5] BOUDREAUX DS, 1974, TETRAHEDRALLY BONDED, P206

[6] CONNELL GAN, 1974, TETRAHEDRALLY BONDED, P193

[7] RADIAL DENSITY FUNCTIONS FOR LIQUID MERCURY AND LEAD [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1336 - &

[8] MOSS SC, 1970, 10TH P INT C PHYS SE, P658

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] TEMKIN RJ, 1974, TETRAHEDRALLY BONDED, P229

[1] BARNA A, 1976, STRUCTURE EXCITATION, P199

[2] BARNA A, 1974, 5TH P INT C AM LIQ S, V1, P109

[3] BARNA A, 1976, P INT C AMORPHOUS LI

[4] INFLUENCE OF EVAPORATION PARAMETERS ON ELECTRICAL PROPERTIES OF AMORPHOUS-GERMANIUM AND SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (02): : 511 - 520

[5] BOUDREAUX DS, 1974, TETRAHEDRALLY BONDED, P206

[6] CONNELL GAN, 1974, TETRAHEDRALLY BONDED, P193

[7] RADIAL DENSITY FUNCTIONS FOR LIQUID MERCURY AND LEAD [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1336 - &

[8] MOSS SC, 1970, 10TH P INT C PHYS SE, P658

[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949

[10] TEMKIN RJ, 1974, TETRAHEDRALLY BONDED, P229