INFLUENCE OF EVAPORATION PARAMETERS ON ELECTRICAL PROPERTIES OF AMORPHOUS-GERMANIUM AND SILICON

[1] BAHL SK, 1973, 5TH P INT C AM LIQ S, P69

[2] BARNA A, 1973, 5TH P INT C AM LIQ S, P109

[3] INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 231 - 240

[4] BEYER W, 1973, 5TH P INT C LIQ AM S, P251

[5] BIENENSTOCK A, 1973, 5TH P INT C AM LIQ S, P49

[6] CHITTICK RC, 1970, J NONCRYST SOLIDS, V3, P225

[7] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[8] DONOVAN TM, 1973, 5TH P INT C AM LIQ S, P549

[9] JONES DH, TO BE PUBLISHED

[10] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[1] BAHL SK, 1973, 5TH P INT C AM LIQ S, P69

[2] BARNA A, 1973, 5TH P INT C AM LIQ S, P109

[3] INFLUENCE OF ION-IMPLANTATION ON ELECTRICAL PROPERTIES OF AMORPHOUS-GE AND SI [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 231 - 240

[4] BEYER W, 1973, 5TH P INT C LIQ AM S, P251

[5] BIENENSTOCK A, 1973, 5TH P INT C AM LIQ S, P49

[6] CHITTICK RC, 1970, J NONCRYST SOLIDS, V3, P225

[7] HIGH-RESOLUTION ELECTRON MICROSCOPE OBSERVATION OF VOIDS IN AMORPHOUS GE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (26) : 1794 - &

[8] DONOVAN TM, 1973, 5TH P INT C AM LIQ S, P549

[9] JONES DH, TO BE PUBLISHED

[10] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X