NUCLEATION AND GROWTH-RATE OF ALPHA-SI ALLOYS

[1] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] RECRYSTALLIZATION AND GRAIN GROWTH [J]. PROGRESS IN METAL PHYSICS, 1952, 3 : 220 - 292

[3] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086

[4] HERNANDEZ JG, 1982, B AM PHYS SOC, V27, P206

[5] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[6] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 686 - 687

[9] TANADA K, 1980, 12TH P C SOL STAT DE

[10] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 534 - 535

[1] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] RECRYSTALLIZATION AND GRAIN GROWTH [J]. PROGRESS IN METAL PHYSICS, 1952, 3 : 220 - 292

[3] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086

[4] HERNANDEZ JG, 1982, B AM PHYS SOC, V27, P206

[5] POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 163 - 165

[6] OPTICAL-PROPERTIES AND STRUCTURE OF AMORPHOUS SILICON FILMS PREPARED BY CVD [J]. SOLAR ENERGY MATERIALS, 1979, 1 (1-2): : 11 - 27

[7] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[8] POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 686 - 687

[9] TANADA K, 1980, 12TH P C SOL STAT DE

[10] CRITICAL VOLUME FRACTION OF CRYSTALLINITY FOR CONDUCTIVITY PERCOLATION IN PHOSPHORUS-DOPED SI-F-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 534 - 535