THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .1. DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY

被引：22

作者：

HASEGAWA, S

SHIMIZU, S

KURATA, Y

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1984年 / 49卷 / 05期

关键词：

D O I：

10.1080/13642818408227659

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：511 / 519

页数：9

共 9 条

[1] PHOTOCONDUCTIVITY AND RECOMBINATION IN DOPED AMORPHOUS SILICON
ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] THICKNESS DEPENDENT CONDUCTIVITY OF N-TYPE HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 611 - 616
[3] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 273 - 285
[4] THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .2. ELECTRON-SPIN-RESONANCE, HYDROGEN VIBRATIONAL-SPECTRA AND OPTICAL-ABSORPTION
HASEGAWA, S
SHIMIZU, S
KURATA, Y
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (05): : 521 - 532
[5] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI
HASEGAWA, S
NARIKAWA, S
KURATA, Y
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05): : 431 - 447
[6] THICKNESS DEPENDENCE OF ELECTRICAL AND OPTICAL-PROPERTIES AND ELECTRON-SPIN-RESONANCE IN UNDOPED A-SI-H
HASEGAWA, S
IMAI, Y
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (03): : 239 - 251
[7] THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
SOLOMON, I
BRODSKY, MH
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4548 - 4549
[8] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
DIETL, T
KAPLAN, D
[J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246
[9] EFFECT OF ADSORBED GASES ON CONDUCTANCE OF AMORPHOUS FILMS OF SEMICONDUCTING SILICON-HYDROGEN ALLOYS
TANIELIAN, M
FRITZSCHE, H
TSAI, CC
SYMBALISTY, E
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 353 - 356

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