THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：61

作者：

AST, DG ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 41卷 / 03期

关键词：

Compendex;

D O I：

10.1080/13642818008245385

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting silicon

引用

页码：273 / 285

页数：13

共 11 条

[1]

AST DG, 1979, I PHYS C SER, V43, P1159

[2] DEPOSITION OF AMORPHOUS SILICON FILMS FROM GLOW-DISCHARGE PLASMAS OF SILANE [J].

BRODSKY, MH .

THIN SOLID FILMS, 1977, 40 (JAN) :L23-L25

[3] PLASMA PREPARATIONS OF AMORPHOUS SILICON FILMS [J].

BRODSKY, MH .

THIN SOLID FILMS, 1978, 50 (MAY) :57-67

[4]

DOHLER GH, 1979, I PHYS C SER, V43, P1005

[5]

MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[6]

MOTT NF, 1971, ELECTRONIC PROCESSES, P201

[7] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J].

SOLOMON, I ;

DIETL, T ;

KAPLAN, D .

JOURNAL DE PHYSIQUE, 1978, 39 (11) :1241-1246

[8] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[9] DOPED AMORPHOUS-SEMICONDUCTORS [J].

SPEAR, WE .

ADVANCES IN PHYSICS, 1977, 26 (06) :811-845

[10]

SPEAR WE, 1979, I PHYS C SER, V43, P697

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