THICKNESS DEPENDENCE OF THE PHOTOCONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：38

作者：

SOLOMON, I ^{[1
]}

BRODSKY, MH ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.328400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4548 / 4549

页数：2

共 7 条

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ANDERSON, DA
SPEAR, WE
[J]. PHILOSOPHICAL MAGAZINE, 1977, 36 (03): : 695 - 712
[2] THICKNESS DEPENDENT CONDUCTIVITY OF N-TYPE HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 611 - 616
[3] THICKNESS AND TEMPERATURE-DEPENDENCE OF THE CONDUCTIVITY OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
AST, DG
BRODSKY, MH
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (03): : 273 - 285
[4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5] BRODSKY MH, UNPUBLISHED
[6] RHEM W, 1977, PHYS STATUS SOLIDI B, V79, P539
[7] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS
SOLOMON, I
DIETL, T
KAPLAN, D
[J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246