Nanolithography with metastabile helium

被引：64

作者：

Nowak, S

Pfau, T

Mlynek, J

机构：

[1] Fakultät für Physik, Universität Konstanz

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 1996年 / 63卷 / 02期

关键词：

Atomic beams - Electrons - Etching - Evaporation - Helium - Ionization - Molecules - Monolayers - Wetting;

D O I：

10.1007/BF01095274

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have used a self-assembling monolayer of dodecanethiole molecules as the resist for a lithography technique based on a beam of metastable helium atoms. Doses as low as 3 metastable helium atoms per 10 molecules are enough to write patterns into this resist. An edge resolution of 30 nanometers is demonstrated. The writing mechanism is based on the damage of the resist due to Penning ionization.

引用

页码：203 / 205

页数：3

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