Room-temperature, low-pressure nanoimprinting based on cationic photopolymerization of novel epoxysilicone monomers

被引:80
作者
Cheng, X
Guo, LJ
Fu, PF
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Dow Corning Corp, Midland, MI 48686 USA
关键词
D O I
10.1002/adma.200401192
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new UV-curable liquid resist based on cationic polymerization of silicone epoxies has been developed for UV-assisted nanoimprint lithography (Uniform films with thicknesses ranging from below 50 nm to over 1 mu m can be easily spin-coated using a suitable undercoating layer on a substrate. Patterns with feature sizes ranging from tens of micrometers to 20 nm (see Figure) are imprinted at room temperature with a pressure of less than 0.1 Wa.
引用
收藏
页码:1419 / +
页数:7
相关论文
共 37 条
  • [31] Direct nanoimprint of submicron organic light-emitting structures
    Wang, J
    Sun, XY
    Chen, L
    Chou, SY
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2767 - 2769
  • [32] Fabrication of a new broadband waveguide polarizer with a double-layer 190 nm period metal-gratings using nanoimprint lithography
    Wang, J
    Schablitsky, S
    Yu, ZN
    Wu, W
    Chou, SY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2957 - 2960
  • [33] Large area high density quantized magnetic disks fabricated using nanoimprint lithography
    Wu, W
    Cui, B
    Sun, XY
    Zhang, W
    Zhuang, L
    Kong, LS
    Chou, SY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3825 - 3829
  • [34] Spinodal dewetting of thin polymer films
    Xie, R
    Karim, A
    Douglas, JF
    Han, CC
    Weiss, RA
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (06) : 1251 - 1254
  • [35] STABILIZATION OF NONWETTING THIN LIQUID-FILMS ON A SOLID SUBSTRATE BY POLYMERIC ADDITIVES
    YERUSHALMIROZEN, R
    KLEIN, J
    [J]. LANGMUIR, 1995, 11 (07) : 2806 - 2814
  • [36] Fabrication of 60-nm transistors on 4-in. wafer using nanoimprint at all lithography levels
    Zhang, W
    Chou, SY
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (08) : 1632 - 1634
  • [37] 2003, TECHNOL REV, V106, P36