Liner conformality in ionized magnetron sputter metal deposition processes

被引:50
作者
Hamaguchi, S
Rossnagel, SM
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 04期
关键词
D O I
10.1116/1.588993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The conformality of thin metal films (liners) formed on high-aspect-ratio trench structures in ionized magnetron sputter deposition processes is studied numerically and experimentally. The numerical simulator (SHADE) used to predict the surface topography is based on the shock-tracking method for surface evolution. The simulation results are in good agreement with experimentally observed thin-film topography. It is shown that combination of direct deposition and trench-bottom resputtering results in good conformality of step coverages and the amount of the resputtering needed for the good conformality is almost independent of trench aspect ratios. (C) 1996 American Vacuum Society.
引用
收藏
页码:2603 / 2608
页数:6
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