CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR ADVANCED ON-CHIP INTERCONNECTS

[1] ACCELERATED-DEPOSITION RATE AND HIGH-QUALITY FILM COPPER CHEMICAL-VAPOR-DEPOSITION USING A WATER-VAPOR ADDITION TO A HYDROGEN AND CU(HFA)(2) REACTION SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9A): : 3915 - 3919

[2] BRADBURY DR, 1991 P INT EL DEV M, P273

[3] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1992, 60 (01) : 50 - 52

[4] SELECTIVITY AND COPPER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) : 3295 - 3299

[5] CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU+1 PRECURSORS IN THE PRESENCE OF WATER-VAPOR [J]. APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2842 - 2844

[6] GELATOS AV, 1993 P S VLSI TECHN, P123

[7] LOWER-TEMPERATURE PLASMA-ETCHING OF CU FILMS USING INFRARED RADIATION [J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2703 - 2704

[8] CHEMICAL-VAPOR DEPOSITION OF COPPER FROM HEXAFLUOROACETYLACETONATO COPPER(I) VINYLTRIMETHYLSILANE - DEPOSITION RATES, MECHANISM, SELECTIVITY, MORPHOLOGY, AND RESISTIVITY AS A FUNCTION OF TEMPERATURE AND PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1434 - 1439

[9] CHEMICAL VAPOR-DEPOSITION OF COPPER FROM (HEXAFLUOROACETYLACETONATO)(ALKYNE)-COPPER(I) COMPLEXES VIA DISPROPORTIONATION [J]. CHEMISTRY OF MATERIALS, 1991, 3 (06) : 995 - 997

[10] JAIN A, 1993, MATER RES SOC SYMP P, V315, P105, DOI 10.1557/PROC-315-105

[1] ACCELERATED-DEPOSITION RATE AND HIGH-QUALITY FILM COPPER CHEMICAL-VAPOR-DEPOSITION USING A WATER-VAPOR ADDITION TO A HYDROGEN AND CU(HFA)(2) REACTION SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9A): : 3915 - 3919

[2] BRADBURY DR, 1991 P INT EL DEV M, P273

[3] MECHANISMS OF COPPER CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1992, 60 (01) : 50 - 52

[4] SELECTIVITY AND COPPER CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) : 3295 - 3299

[5] CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM CU+1 PRECURSORS IN THE PRESENCE OF WATER-VAPOR [J]. APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2842 - 2844

[6] GELATOS AV, 1993 P S VLSI TECHN, P123

[7] LOWER-TEMPERATURE PLASMA-ETCHING OF CU FILMS USING INFRARED RADIATION [J]. APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2703 - 2704

[8] CHEMICAL-VAPOR DEPOSITION OF COPPER FROM HEXAFLUOROACETYLACETONATO COPPER(I) VINYLTRIMETHYLSILANE - DEPOSITION RATES, MECHANISM, SELECTIVITY, MORPHOLOGY, AND RESISTIVITY AS A FUNCTION OF TEMPERATURE AND PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1434 - 1439

[9] CHEMICAL VAPOR-DEPOSITION OF COPPER FROM (HEXAFLUOROACETYLACETONATO)(ALKYNE)-COPPER(I) COMPLEXES VIA DISPROPORTIONATION [J]. CHEMISTRY OF MATERIALS, 1991, 3 (06) : 995 - 997

[10] JAIN A, 1993, MATER RES SOC SYMP P, V315, P105, DOI 10.1557/PROC-315-105