CHEMICAL-VAPOR-DEPOSITION OF COPPER FOR ADVANCED ON-CHIP INTERCONNECTS

[11] JAIN A, 1992, APPL PHYS LETT, V62, P5941

[12] JAIN A, 1992, 1992 MRS SPRING M SA

[13] LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (LTMOCVD) OF DEVICE-QUALITY COPPER-FILMS FOR MICROELECTRONIC APPLICATIONS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) : 271 - 276

[14] ROLES OF TI-INTERMETALLIC COMPOUND LAYERS ON THE ELECTROMIGRATION RESISTANCE OF AL-CU INTERCONNECTING STRIPES [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 5877 - 5881

[15] LUTHER B, 1993 P VLSI MULT INT, P15

[16] CHEMICAL-REACTIONS AT SILICA SURFACES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) : 61 - 71

[17] NORMAN JAT, 1992, J PHYS IV, V1, P271

[18] NORMAN JAT, 1991, J PHYSIQUE, V4, P271

[19] HIGH-RELIABILITY INTERCONNECTIONS FOR ULSI USING AL-SI-PD-NB/MO LAYERED FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1322 - 1326

[20] PAI PL, 1989, ELECTROCHEM SOC EXTE, V882, P362

[11] JAIN A, 1992, APPL PHYS LETT, V62, P5941

[12] JAIN A, 1992, 1992 MRS SPRING M SA

[13] LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION (LTMOCVD) OF DEVICE-QUALITY COPPER-FILMS FOR MICROELECTRONIC APPLICATIONS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (03) : 271 - 276

[14] ROLES OF TI-INTERMETALLIC COMPOUND LAYERS ON THE ELECTROMIGRATION RESISTANCE OF AL-CU INTERCONNECTING STRIPES [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (12) : 5877 - 5881

[15] LUTHER B, 1993 P VLSI MULT INT, P15

[16] CHEMICAL-REACTIONS AT SILICA SURFACES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) : 61 - 71

[17] NORMAN JAT, 1992, J PHYS IV, V1, P271

[18] NORMAN JAT, 1991, J PHYSIQUE, V4, P271

[19] HIGH-RELIABILITY INTERCONNECTIONS FOR ULSI USING AL-SI-PD-NB/MO LAYERED FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1322 - 1326

[20] PAI PL, 1989, ELECTROCHEM SOC EXTE, V882, P362