Enhanced tunnel magnetoresistance in granular nanobridges

被引：88

作者：

Yakushiji, K

Mitani, S

Takanashi, K

Takahashi, S

Maekawa, S

Imamura, H

Fujimori, H

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Grad Sch Informat Sci, Aoba Ku, Sendai, Miyagi 9808579, Japan

[3] Res Inst Elect & Magnet Mat, Taihaku Ku, Sendai, Miyagi 9820807, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1341231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated granular nanobridge structures consisting of electrodes separated by a nanometer-sized gap in which a thin insulating CoAlO granular film is filled, and measured the current-bias voltage characteristics in a magnetic field to investigate the spin-dependent transport. The Coulomb blockade with a clear threshold voltage (V-th) is observed at 4.2 K. Tunnel magnetoresistance (TMR) is enhanced by fabricating nanobridges. TMR shows a maximum exceeding about 30% at the voltage slightly above V-th. This enhancement is explained by the orthodox theory of single electron tunneling in ferromagnetic multiple tunnel junctions. (C) 2001 American Institute of Physics.

引用

页码：515 / 517

页数：3

共 15 条

[1]

Magnetoresistance oscillations due to changing effects in double ferromagnetic tunnel junctions [J].