Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications

被引：37

作者：

Korotkov, AL ^{[1
]}

Perera, AGU

Shen, WZ

Herfort, J

Ploog, KH

Schaff, WJ

Liu, HC

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 06期

关键词：

D O I：

10.1063/1.1347002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Far infrared (FIR) absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20-200 mum and compared with the calculated results. Both Be (in the range 3x10(18)-2.6x10(19) cm(-3)) and C (1.8x10(18)-4.7x10(19) cm(-3))-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model with a dominant role of free-carrier absorption in highly doped regions. High reflection from heavily doped thick layers is attractive for the resonant cavity enhanced FIR detectors. (C) 2001 American Institute of Physics.

引用

页码：3295 / 3300

页数：6

共 13 条

[1]

Blakemore J. S., 1982, J APPL PHYS, V52, p123(R)

[2] INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE [J].

BRAUNSTEIN, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :280-282

[3] VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].

BRAUNSTEIN, R ;

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1423-&

[4] Photoconductivity nonlinearity at high excitation power in quantum well infrared photodetectors [J].

Ershov, M ;

Liu, HC ;

Buchanan, M ;

Wasilewski, ZR ;

Ryzhii, V .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :414-416

[5] INFRARED REFLECTANCE STUDIES OF BULK AND EPITAXIAL-FILM N-TYPE GAAS [J].

HOLM, RT ;

GIBSON, JW ;

PALIK, ED .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :212-223

[6] OPTICAL-ABSORPTION BY FREE HOLES IN HEAVILY DOPED GAAS [J].

HUBERMAN, ML ;

KSENDZOV, A ;

LARSSON, A ;

TERHUNE, R ;

MASERJIAN, J .

PHYSICAL REVIEW B, 1991, 44 (03) :1128-1133

[7] PLASMON-PHONON COUPLING IN GAAS [J].

KUKHARSKII, AA .

SOLID STATE COMMUNICATIONS, 1973, 13 (11) :1761-1765

[8] ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY [J].

LIEVIN, JL ;

ALEXANDRE, F .

ELECTRONICS LETTERS, 1985, 21 (10) :413-414

[9]

MASERJIAN J, 1991, P SOC PHOTO-OPT INS, V1540, P127, DOI 10.1117/12.48723

[10] A NOTE OF NEW DEVELOPMENTS IN CZECH LINGUISTICS [J].

PEREGRIN, J .

THEORETICAL LINGUISTICS, 1995, 21 (01) :1-5

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