Helium behavior in UO2 polycrystalline disks

被引：25

作者：

Guilbert, S ^{[1
]}

Sauvage, T

Erramli, H

Barthe, MF

Desgardin, P

Blondiaux, G

Corbel, C

Piron, JP

机构：

[1] Ctr Etud & Rech Irradiat, F-45071 Orleans, France

[2] Univ Cadi Ayyad, Fac Sci Semlalia, Nucl Phys & Tech Lab, Marrakech, Morocco

[3] CEA Saclay, Lab Radiolyse, F-91191 Gif Sur Yvette, France

[4] CEA Cadarache, SESC, DEC, DEN, F-13108 St Paul Les Durance, France

来源：

JOURNAL OF NUCLEAR MATERIALS | 2003年 / 321卷 / 2-3期

关键词：

D O I：

10.1016/S0022-3115(03)00212-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV He-3 at a nominal fluence of 5 x 10(16) He-3 cm(-2) using a Van de Graaff accelerator. The He-3(d,alpha)H-1 nuclear reaction analysis method was used to determine the helium depth profile in the UO2 disks. Partial flaking was observed after annealing at 500 degreesC for local He concentration of 1 at.%. After annealing at 600 degreesC flaking has affected the whole surface. The formation of helium bubbles is discussed. (C) 2003 Elsevier B.V. All rights reserved.

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页码：121 / 128

页数：8

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