DENSITY PROFILE OF IMPLANTED HE-3 MEASURED BY MEANS OF HE-3(D,P)HE-4 NUCLEAR-REACTION

被引：16

作者：

HUFSCHMIDT, M ^{[1
]}

HEINTZE, V ^{[1
]}

MOLLER, W ^{[1
]}

KAMKE, D ^{[1
]}

机构：

[1] RUHR UNIV,INST EXPTL PHYS 1,463 BOCHUM,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS | 1975年 / 124卷 / 02期

关键词：

D O I：

10.1016/0029-554X(75)90612-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：573 / 577

页数：5

共 34 条

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[J]. APPLIED PHYSICS LETTERS, 1973, 23 (11) : 593 - 595
[5] BOGH E, 1963, 4 P SCAND IS SEP S
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[9] RAPID PROFILE MEASUREMENTS IN ION IMPLANTED SILICON
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[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (01): : 23 - &
[10] IMPLANTATION PROFILES OF 32P CHANNELED INTO SILICON CRYSTALS
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