DEPTH DISTRIBUTION OF IMPLANTED HELIUM AND OTHER LOW-Z ELEMENTS IN METAL-FILMS USING PROTON BACKSCATTERING

被引：40

作者：

BLEWER, RS ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1063/1.1654759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：593 / 595

页数：3

共 18 条

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[6] ENTRAPMENT OF HELIUM IONS AT (100) AND (110) TUNGSTEN SURFACES
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[J]. CANADIAN JOURNAL OF PHYSICS, 1970, 48 (23) : 2812 - +
[7] Mayer J. W., 1970, ION IMPLANTATION SEM
[8] DETERMINATION OF LIGHTER IMPURITIES ON SILICON BY 90 DEGREES FORWARD ION SCATTERING THROUGH THIN TARGETS
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GIBSON, WM
[J]. NUCLEAR INSTRUMENTS & METHODS, 1972, 98 (02): : 375 - &
[9] MERVINE LR, 1971, UCRL73087 REP
[10] ANALYSIS OF AMORPHOUS LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTS
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[J]. SURFACE SCIENCE, 1970, 22 (02) : 263 - &