Electronic and crystal structure of fully strained LaNiO3 films -: art. no. 113408

被引：60

作者：

Dobin, AY ^{[1
]}

Nikolaev, KR

Krivorotov, IN

Wentzcovitch, RM

Dahlberg, ED

Goldman, AM

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Supercomp Inst Digital Simulat & Adv Computat, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.68.113408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First-principles band structure calculations have been used to investigate epitaxially strained LaNiO3 films. Experimentally, tensile biaxial strain has been realized in pseudomorphic LaNiO3 films grown on SrTiO3 (001) substrates using ozone-assisted molecular beam epitaxy. Measured and calculated out-of-plane lattice parameters are in excellent agreement. This demonstrates the viability of the computational method as well as the high quality of the films.

引用

页数：4

共 19 条

[1] FABRICATION OF HIGH-TC SUPERCONDUCTORS USING OZONE-ASSISTED MOLECULAR-BEAM EPITAXY [J].

ACHUTHARAMAN, VS ;

BEAUCHAMP, KM ;

CHANDRASEKHAR, N ;

SPALDING, GC ;

JOHNSON, BR ;

GOLDMAN, AM .

THIN SOLID FILMS, 1992, 216 (01) :14-20

[2] Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes [J].

Bao, DH ;

Mizutani, N ;

Yao, X ;

Zhang, LY .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1041-1043

[3] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].

CEPERLEY, DM ;

ALDER, BJ .

PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569

[4] In situ reflection high-energy electron diffraction observation of epitaxial LaNiO3 thin films [J].

Chen, P ;

Xu, SY ;

Zhou, WZ ;

Ong, CK ;

Cui, DF .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :3000-3002

[5] NEUTRON-DIFFRACTION STUDY OF RNIO3 (R = LA,PR,ND,SM) - ELECTRONICALLY INDUCED STRUCTURAL-CHANGES ACROSS THE METAL-INSULATOR-TRANSITION [J].

GARCIAMUNOZ, JL ;

RODRIGUEZCARVAJAL, J ;

LACORRE, P ;

TORRANCE, JB .

PHYSICAL REVIEW B, 1992, 46 (08) :4414-4425

[6] THICKNESS DEPENDENCE OF MAGNETORESISTANCE IN LA-CA-MN-O EPITAXIAL-FILMS [J].

JIN, S ;

TIEFEL, TH ;

MCCORMACK, M ;

OBRYAN, HM ;

CHEN, LH ;

RAMESH, R ;

SCHURIG, D .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :557-559

[7] NUMERICAL CALCULATION OF DENSITY OF STATES AND RELATED PROPERTIES [J].

LEHMANN, G ;

TAUT, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 54 (02) :469-477

[8] BLOCK-BY-BLOCK DEPOSITION - A NEW GROWTH METHOD FOR COMPLEX OXIDE THIN-FILMS [J].

LOCQUET, JP ;

CATANA, A ;

MACHLER, E ;

GERBER, C ;

BEDNORZ, JG .

APPLIED PHYSICS LETTERS, 1994, 64 (03) :372-374

[9] Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain [J].

Locquet, JP ;

Perret, J ;

Fompeyrine, J ;

Mächler, E ;

Seo, JW ;

Van Tendeloo, G .

NATURE, 1998, 394 (6692) :453-456

[10] NON-LINEAR IONIC PSEUDOPOTENTIALS IN SPIN-DENSITY-FUNCTIONAL CALCULATIONS [J].

LOUIE, SG ;

FROYEN, S ;

COHEN, ML .

PHYSICAL REVIEW B, 1982, 26 (04) :1738-1742

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