Forced formation of ionized donor layer in p-MOSFET at cryogenic temperatures due to photon emission from its channel

被引：2

作者：

Frantsuzov, AA ^{[1
]}

Kharin, AV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P3期

关键词：

D O I：

10.1051/jp4:1998310

中图分类号：

O4 [物理学];

学科分类号：

0702 [物理学];

摘要：

Donor ionization in the substrate of p-channel metal-oxide-silicon transistor was investigated, giving rise to a space charge region and to transistor threshold. Measurements were carried out in the temperature range from 4.2 to 8 K and at low magnitudes of longitudinal electric fields in the transistor channel between 500 and 2000 V/cm. It has been shown, that at such conditions the donor ionization in the substrate is caused by photon emission from the transistor channel.

引用

页码：41 / 44

页数：4