FAR INFRARED-EMISSION FROM HOT-ELECTRONS IN SI-INVERSION LAYERS

被引：19

作者：

GORNIK, E ^{[1
]}

TSUI, DC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 01期

关键词：

D O I：

10.1016/0038-1101(78)90127-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：139 / 142

页数：4

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[1] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
FOWLER, AB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +
[2] RECOMBINATION RADIATION FROM IMPACT-IONIZED SHALLOW DONORS IN N-TYPE INSB
GORNIK, E
[J]. PHYSICAL REVIEW LETTERS, 1972, 29 (09) : 595 - &
[3] VOLTAGE-TUNABLE FAR-INFRARED EMISSION FROM SI INVERSION LAYERS
GORNIK, E
TSUI, DC
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (21) : 1425 - 1428
[4] GORNIK E, UNPUBLISHED
[5] FAR INFRARED REFLECTION SPECTRA OF AGCL AGBR AND AGL AT LOW TEMPERATURES
HADNI, A
CLAUDEL, J
STRIMER, P
[J]. APPLIED OPTICS, 1968, 7 (06): : 1159 - &
[6] ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100)
KNESCHAUREK, P
KAMGAR, A
KOCH, JF
[J]. PHYSICAL REVIEW B, 1976, 14 (04) : 1610 - 1622
[7] A HIGH-DETECTIVITY GALLIUM-DOPED GERMANIUM DETECTOR FOR 40-120MU REGION
MOORE, WJ
SHENKER, H
[J]. INFRARED PHYSICS, 1965, 5 (03): : 99 - &
[8] TRANSMISSION OF ISOTROPIC RADIATION ACROSS INTERFACE BETWEEN 2 DIELECTRICS
STERN, F
[J]. APPLIED OPTICS, 1964, 3 (01): : 111 - &
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
STERN, F
HOWARD, WE
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &