Mechanism of Ni film CVD with a Ni(ktfaa)2 precursor on a copper substrate

The mechanisms of pyrolysis in He and reduction in H-2 of a Ni(ktfaa)(2) chelate and nickel film deposition on copper substrates are discussed. The Ni films produced by CVD with the Ni(ktfaa)(2) chelate as a precursor are continuous. Pyrolvsis of the Ni(ktfaa)(2) chelate takes place above 300 degreesC. The hydrogen atmosphere allows the reaction temperature to be decreased to 213 degreesC, but the film deposition rate is low. 300 degreesC is the optimal temperature for continuous Ni film deposition on Cu substrates. The mechanism of hydrogen interaction with the adsorbed Ni(ktfaa)(2) chelate is discussed.