Characterization of a semi-insulating GaAs photoconductive semiconductor switch for ultrawide band high power microwave applications

被引：50

作者：

Islam, NE ^{[1
]}

Schamiloglu, E ^{[1
]}

Fleddermann, CB ^{[1
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122344

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Simulation results depicting physical conditions in a photoconductive semiconductor switch in the pulse charging state, prior to high power switching, are analyzed. Results show that surface conditions and EL2 traps in semi-insulating GaAs influence the conduction process, specifically at high bias. Formation of trap-filled regions renders the device inhomogeneous for stable conduction and premature breakdown occurs, due to a large extent on unstable current filamentation within the device. Unlike insulators, the breakdown of desorbed gas from the surface (surface flashover) does not contribute to premature breakdown. (C) 1998 American Institute of Physics. [S0003-6951(98)01340-0].

引用

页码：1988 / 1990

页数：3

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