Photoluminescence lifetime distributions of chalcogenide glasses obtained by wide-band frequency resolved spectroscopy

被引:20
作者
Aoki, T [1 ]
Komedoori, S
Kobayashi, S
Shimizu, T
Ganjoo, A
Shimakawa, K
机构
[1] Tokyo Inst Polytech, Dept Elect & Comp Engn, Atsugi, Kanagawa 2430297, Japan
[2] Tokyo Inst Polytech, Joint Res Ctr High Technol, Atsugi, Kanagawa 2430297, Japan
[3] Gifu Univ, Dept Elect & Elect Engn, Gifu 5011193, Japan
关键词
D O I
10.1016/S0022-3093(03)00407-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photo luminescence (PL) lifetime distributions for amorphous arsenic chalcogenides g-As2Se3 and g-As2S3, and amorphous selenium a-Se, are obtained for the first time using a quadrature frequency resolved spectroscopy (QFRS) technique modified for nanosecond resolution. The g-As2S3 and a-Se chalcogenides exhibit double-peak lifetime distributions, whereas the lifetime distribution of g-As2Se3 peaks uniquely at around 10(-4) s, which is consistent with earlier results. PL fatigue is found to reduce the intensity of PL but not affect the observed PL lifetimes. A self-trapped exciton model is adopted to explain the experimental results, providing reasonable mechanisms for the two-component lifetimes and associated phenomena. For a-Se, singlet-triplet exchange energy of approximate to160 meV is estimated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:273 / 278
页数:6
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