Effect of BF2 implantation on ultrathin gate oxide reliability

被引：2

作者：

Lin, C

Chou, AI

Kumar, K

Choudhury, P

Lee, JC

机构：

[1] Microelectronics Research Center, University of Texas at Austin, Austin

[2] LSI Logic Corporation, Santa Clara, CA 95054

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.117040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BF2 implantation is widely used to form P wells, adjust channel threshold voltage, and reduce short channel effects. In this letter, we study effect of BF2 implantation on ultrathin gate oxide reliability. It has been found that BF2 implantation into Si substrate causes degradation of gate oxide reliability in the ultrathin oxide thickness regime. N2O oxide can be used to reduce degradation caused by the implantation and improve gate oxide reliability. (C) 1996 American Institute of Physics.

引用

页码：1591 / 1592

页数：2

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