Compositional gradient in and mechanical stability of RF-sputtered and RTA annealed Pb(Zr,Ti)O3 thin films

被引:5
作者
Defay, E [1 ]
Semmache, B [1 ]
Dubois, C [1 ]
LeBerre, M [1 ]
Barbier, D [1 ]
机构
[1] CNRS, Phys Mat Lab, UMR 5511, F-69621 Villeurbanne, France
关键词
PZT; sputtering; rapid thermal annealing (RTA); secondary ion mass spectrometry (SIMS); mechanical stability; ferroelectricity;
D O I
10.1016/S0924-4247(98)00351-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A previous study made in our laboratory has shown that high sputtering pressure (8 Pa) improved the mechanical stability of RF-sputtered and RTA annealed Pb(Zr,Ti)O-3 (PZT) thin films on Si/SiO2/Ti/Pt substrate. In this work, secondary ion mass spectrometry (SIMS) points out that a Pb-gradient occurs preferentially in the PZT thin films sputtered at low pressure (2 Pa). This experiment allows to exhibit a strong correlation between the mechanical stability of the PZT thin films and the Pb-gradient appearing over their thickness during the sputtering. Furthermore, a pre-annealing of the substrate (400 degrees C during 30 s in Argon at 100 degrees C/s) is found to improve at the same time the mechanical stability and the (111)-orientation of the PZT thin films. The polarizability is also enhanced by multi-sputtering, i.e., by sputtering five identical PZT layers onto the same substrate. However; the ferroelectric properties seem to be very sensitive with the thickness and the Pb-gradient of the PZT thin films. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:77 / 80
页数:4
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