Unusual evolution of the lowest unoccupied state in Ga(As0.5-yP0.5-yN2y)

被引:7
作者
Bellaiche, L [1 ]
Modine, NA
Jones, ED
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
PHYSICAL REVIEW B | 2000年 / 62卷 / 23期
关键词
D O I
10.1103/PhysRevB.62.15311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The character of the lowest unoccupied state in the random Ga(As0.5-yP0.5-yN2y) alloys is investigated for small nitrogen concentrations (0.1%<2y<1.0%) using a pseudopotential technique. As nitrogen is added to Ga(As0.5P0.5), this state evolves from an impurity localized level to a delocalized bandlike state. This evolution involves two processes. The first process is an anticrossing between the deep-gap nitrogen impurity level existing in the dilute alloy limit y-->0 and the Gamma (1c)-like extended state of Ga(As0.5P0.5). The second process is the formation of an impurity subband due to the interaction of the deep-gap nitrogen levels. These two processes are expected to occur in any Ga(As1-x-y1 Px-y2Ny1 + y2) alloys for which x is larger than 0.3.
引用
收藏
页码:15311 / 15314
页数:4
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