Hierarchical bunching of steps in a conserved system

被引：20

作者：

Sato, M

Uwaha, M

机构：

[1] Nagoya Univ, Dept Phys, Chikusa Ku, Nagoya, Aichi 4648602, Japan

[2] Gakushuin Univ, Ctr Comp, Toshima Ku, Tokyo 1718588, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1998年 / 67卷 / 11期

关键词：

step bunching; Si(111); surface diffusion; electromigration; scaling; pattern formation;

D O I：

10.1143/JPSJ.67.3675

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the growth law of step bunches formed by the drift of adatoms in a one-dimensional step model with conservation of atoms. The simulation result shows that the terrace size between bunches grows as a power of time L similar to t(beta) with beta = 1/2 irrespective of the step interaction. The exponent agrees with experiment on Si(lll) surface. The average step distance in a bunch is also related to the step interaction potential. A simple theoretical picture, based on a hierarchical bunching of steps, explains these results.

引用

页码：3675 / 3678

页数：4

共 22 条

[1]

Dobbs H, 1996, J PHYS I, V6, P413, DOI 10.1051/jp1:1996166

[2] SIMULTANEOUS BUNCHING AND DEBUNCHING OF SURFACE STEPS - THEORY AND RELATION TO EXPERIMENTS [J].