Electromigration and gold-induced step bunching on the Si(111) surface

被引：25

作者：

Latyshev, AV ^{[1
]}

Minoda, H

Tanishiro, Y

Yagi, K

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

SURFACE SCIENCE | 1998年 / 401卷 / 01期

基金：

日本学术振兴会;

关键词：

DC heating; effective charge; electromigration; evaporation and sublimation; reflection electron microscopy; silicon; step bunching;

D O I：

10.1016/S0039-6028(97)00901-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Step bunching instability induced by adatom electromigration is studied on the Si(111) surface at temperatures of 830-1000 degrees C by ultrahigh vacuum reflection electron microscopy. Tu highlight the role of the effective charge of adatoms in step bunching, a small amount of gold atoms was deposited onto the Si(111) surface at these temperatures. It was found that in the case of sample heating by DC in the step-up direction, regular steps on the clean surface were unstable after submonolayer gold adsorptions while step bunches on the clean surface were transformed to regular steps on the gold-adsorbed surface during heating by DC in the step-down direction. We conclude that gold adsorption changes the sign of tie effective charge of silicon adatoms from positive to negative. In this temperature range, the value of the adatom effective charge was estimated to be 0.004 +/- 0.001 in units of the elementary charge. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：22 / 33

页数：12

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