ELECTROMIGRATION IN METALS

[1] ADDA Y, 1966, DIFFUSION SOLIDES, V1, pCH5

[2] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[3] AGARWALA BN, 1972, J APPL PHYS, V39, P1487

[4] AMES I, 1970, IBM J RES DEV, V4, P461

[5] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[6] BART JJ, 1982, 20TH P IEEE S REL PH, P284

[7] ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 880 - +

[8] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[9] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[10] BLACK JR, 1967, 6TH ANN INT REL PHYS, P148

[1] ADDA Y, 1966, DIFFUSION SOLIDES, V1, pCH5

[2] DEPENDENCE OF ELECTROMIGRATION-INDUCED FAILURE TIME ON LENGTH AND WIDTH OF ALUMINUM THIN-FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3954 - &

[3] AGARWALA BN, 1972, J APPL PHYS, V39, P1487

[4] AMES I, 1970, IBM J RES DEV, V4, P461

[5] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +

[6] BART JJ, 1982, 20TH P IEEE S REL PH, P284

[7] ELECTROMIGRATION DAMAGE OF GRAIN-BOUNDARY TRIPLE POINTS IN A1 THIN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 880 - +

[8] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[9] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &

[10] BLACK JR, 1967, 6TH ANN INT REL PHYS, P148