ELECTROMIGRATION IN METALS

[21] TEMPERATURE DISTRIBUTION ON THIN-FILM METALLIZATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 1775 - 1779

[22] CRACKED-STRIPE RESISTANCE AND CURRENT CROWDING EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (02) : 267 - 271

[23] CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1341 - 1346

[24] ELECTROMIGRATION IN AL/SI CONTACTS - INDUCED OPEN-CIRCUIT FAILURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1256 - 1262

[25] Regarding the participation of protons in the electricity line in metals [J]. ZEITSCHRIFT FUR PHYSIK, 1930, 62 (1-2): : 1 - 31

[26] COTTLE JG, 1987, 4TH VLSI MULT INT C, P449

[27] D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108

[28] d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[29] FORCE IN ELECTROMIGRATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (20): : 3348 - 3352

[30] ELECTROMIGRATION IN ALUMINUM THIN-FILMS UNDER PULSED-CURRENT CONDITIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1976, 123 (11): : 1209 - 1212

[21] TEMPERATURE DISTRIBUTION ON THIN-FILM METALLIZATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 1775 - 1779

[22] CRACKED-STRIPE RESISTANCE AND CURRENT CROWDING EFFECT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (02) : 267 - 271

[23] CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1341 - 1346

[24] ELECTROMIGRATION IN AL/SI CONTACTS - INDUCED OPEN-CIRCUIT FAILURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) : 1256 - 1262

[25] Regarding the participation of protons in the electricity line in metals [J]. ZEITSCHRIFT FUR PHYSIK, 1930, 62 (1-2): : 1 - 31

[26] COTTLE JG, 1987, 4TH VLSI MULT INT C, P449

[27] D'Heurle F., 1970, Applied Physics Letters, V16, P80, DOI 10.1063/1.1653108

[28] d'Heurle F. M., 1978, Thin films. Interdiffusion and reactions, P243

[29] FORCE IN ELECTROMIGRATION [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (20): : 3348 - 3352

[30] ELECTROMIGRATION IN ALUMINUM THIN-FILMS UNDER PULSED-CURRENT CONDITIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1976, 123 (11): : 1209 - 1212