CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[4] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180

[5] GARGINI PA, 1982, 20TH P ANN REL PHYS, P66

[6] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 275 - 277

[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[8] REVIEW OF LIMITATIONS OF ALUMINUM THIN-FILMS ON SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1975, 11 (04): : 281 - 290

[9] EFFECTS OF DIELECTRIC OVERCOATING ON ELECTROMIGRATION IN ALUMINUM INTERCONNECTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 348 - &

[10] Towner J. M., 1983, 21st Annual Proceedings on Reliability Physics 1983, P36, DOI 10.1109/IRPS.1983.361958

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &

[4] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180

[5] GARGINI PA, 1982, 20TH P ANN REL PHYS, P66

[6] SHEET RESISTANCE-JUNCTION DEPTH RELATIONSHIPS IN IMPLANTED ARSENIC DIFFUSION [J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 275 - 277

[7] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[8] REVIEW OF LIMITATIONS OF ALUMINUM THIN-FILMS ON SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1975, 11 (04): : 281 - 290

[9] EFFECTS OF DIELECTRIC OVERCOATING ON ELECTROMIGRATION IN ALUMINUM INTERCONNECTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 348 - &

[10] Towner J. M., 1983, 21st Annual Proceedings on Reliability Physics 1983, P36, DOI 10.1109/IRPS.1983.361958