ELECTROMIGRATION IN AL/SI CONTACTS - INDUCED OPEN-CIRCUIT FAILURE

被引：8

作者：

CHERN, JGJ ^{[1
]}

OLDHAM, WG ^{[1
]}

CHEUNG, N ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1256 / 1262

页数：7

共 19 条

[1] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS
ATTARDO, MJ
ROSENBERG, R
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2381 - +
[2] ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES
BLACK, JR
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1587 - &
[3] ELECTROMIGRATION - A BRIEF SURVEY AND SOME RECENT RESULTS
BLACK, JR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (04) : 338 - &
[4] ELECTROMIGRATION-INDUCED FAILURES IN ALUMINUM FILM CONDUCTORS
BLAIR, JC
GHATE, PB
HAYWOOD, CT
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 281 - &
[5] ELECTROMIGRATION IN THIN AL FILMS
BLECH, IA
MEIERAN, ES
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 485 - &
[6] CONTACT-ELECTROMIGRATION-INDUCED LEAKAGE FAILURE IN ALUMINUM-SILICON TO SILICON CONTACTS
CHERN, JGJ
OLDHAM, WG
CHEUNG, N
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1341 - 1346
[7] DETERMINING SPECIFIC CONTACT RESISTIVITY FROM CONTACT END RESISTANCE MEASUREMENTS
CHERN, JGJ
OLDHAM, WG
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) : 178 - 180
[8] THIN-FILM METALLIZATION STUDIES AND DEVICE LIFETIME PREDICTION USING AL-SI AND AL-CU-SI CONDUCTOR TEST BARS
DANSO, KA
TULLOS, L
[J]. MICROELECTRONICS AND RELIABILITY, 1981, 21 (04): : 513 - 527
[9] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
GAENSSLEN, FH
YU, HN
RIDEOUT, VL
BASSOUS, E
LEBLANC, AR
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
[10] GARGINI PA, 1982, 20TH P ANN REL PHYS, P66

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