Surface conductivity for Au or Ag on Si(111)

被引：39

作者：

Jiang, CS ^{[1
]}

Hasegawa, S ^{[1
]}

Ino, S ^{[1
]}

机构：

[1] UNIV TOKYO,SCH SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.54.10389

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface electrical conductivity was separated from the bulk one by simultaneous conductivity measurements of two different surface structures formed on a single Si-wafer surface in ultrahigh vacuum. We have found that the surface conductivities for the Si(lll)-root 3 x root 3-Ag and -5 x 2-Au superstructures are inherently higher than that of the Si(lll)-7 x 7 clean surface by (11.5 +/- 0.5) x 10(-5) A/V and (5 +/- 1) x 10(-5) A/V, respectively. These excess conductivities are estimated to originate mainly from the surface space-charge layer, although the surface-state-band conduction is considered to partly contribute, especially on the root 3 x root 3-Ag surface.

引用

页码：10389 / 10392

页数：4

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