Surface conductivity for Au or Ag on Si(111)

被引:39
作者
Jiang, CS [1 ]
Hasegawa, S [1 ]
Ino, S [1 ]
机构
[1] UNIV TOKYO,SCH SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 15期
关键词
D O I
10.1103/PhysRevB.54.10389
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface electrical conductivity was separated from the bulk one by simultaneous conductivity measurements of two different surface structures formed on a single Si-wafer surface in ultrahigh vacuum. We have found that the surface conductivities for the Si(lll)-root 3 x root 3-Ag and -5 x 2-Au superstructures are inherently higher than that of the Si(lll)-7 x 7 clean surface by (11.5 +/- 0.5) x 10(-5) A/V and (5 +/- 1) x 10(-5) A/V, respectively. These excess conductivities are estimated to originate mainly from the surface space-charge layer, although the surface-state-band conduction is considered to partly contribute, especially on the root 3 x root 3-Ag surface.
引用
收藏
页码:10389 / 10392
页数:4
相关论文
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