Examination of deuterium transport through device structures

被引：27

作者：

Chen, PJ ^{[1
]}

Wallace, RM ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 23期

关键词：

D O I：

10.1063/1.122791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use secondary ion mass spectrometry to characterize the hydrogen/deuterium distribution and concentration on 0.18 mu m "metal'' oxide silicon test structures subjected to deuterium anneals. We examine the temperature dependence and the influence of doping on the transport of deuterium to the gate oxide interfaces resulting in interface passivation. We find that undoped polycrystalline silicon appears to be an efficient barrier for deuterium transport at typical postmetallization sintering temperatures. (C) 1998 American Institute of Physics. [S0003-6951(98)00149-1].

引用

页码：3441 / 3443

页数：3

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