Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium

被引:18
作者
Cederberg, JG
Culp, TD
Bieg, B
Pfeiffer, D
Winter, CH
Bray, KL
Kuech, TF
机构
[1] Univ Wisconsin, Dept Chem Engn, Madison, WI 53706 USA
[2] Wayne State Univ, Dept Chem, Detroit, MI 48202 USA
[3] Washington State Univ, Dept Chem, Pullman, WA 99164 USA
关键词
D O I
10.1063/1.369179
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the use of an alternative erbium precursor, tris(3,5-di-tert- butyl-pyrazolato)bis(4- tert-butylpyridine)erbium, to dope erbium into GaAs. The incorporated erbium forms an optically active center identified as Er-2O. The GaAs: Er formed using this precursor exhibits sharper and more intense optical emission, attributed to the Er-2O center, than that previously found with cylcopentadienyl-based erbium sources. Codoping GaAs: Er with shallow donors results in a quenching of the erbium-related luminescence, while codoping with shallow acceptors results in no significant change in the spectrum. Mechanisms for the observed luminescence-quenching behavior are discussed. Deep level transient spectroscopy performed on silicon or selenium codoped GaAs: Er showed the presence of several electron traps in the upper half of the band gap. The origins of these electron traps are considered. (C) 1999 American Institute of Physics. [S0021-8979(99)10903-4].
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页码:1825 / 1831
页数:7
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