Optical gain in silicon nanocrystals

被引：18

作者：

Dal Negro, L

Pavesi, L

Pucker, G

Franzò, G

Priolo, F

机构：

[1] INFM, I-38050 Trent, Italy

[2] Univ Trent, Dipartimento Fis, I-38050 Trent, Italy

[3] Univ Catania, Dipartmento Fis, I-95129 Catania, Italy

[4] INFM, I-95129 Catania, Italy

来源：

OPTICAL MATERIALS | 2001年 / 17卷 / 1-2期

关键词：

silicon; nanocrystals; optical gain;

D O I：

10.1016/S0925-3467(01)00018-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of stimulated emission and single pass light amplification in Si nanocrystals obtained by ion implantation. We argue that population inversion involves Si=O interface states. (C) 2001 Elsevier Science B,V. All rights reserved.

引用

页码：41 / 44

页数：4

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