Quantum confinement and interface effects on photoluminescence from silicon single quantum wells

被引：41

作者：

Okamoto, S ^{[1
]}

Kanemitsu, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 103卷 / 10期

关键词：

nanostructures; quantum wells; optical properties; luminescence;

D O I：

10.1016/S0038-1098(97)00227-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied photoluminescence (PL) spectrum and dynamics of Si single quantum wells sandwiched between SiO2 layers. The asymmetric luminescence spectrum consists of two Gaussian bands in the visible and infrared spectral region. From the size-dependence of the PL spectrum and PL decay dynamics, it is concluded that the strong PL band is caused by the radiative recombination in the Si-SiO2 interface states, while the weak PL band in the two-dimensional Si quantum well. (C) 1997 Elsevier Science Ltd.

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页码：573 / 576

页数：4

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