Sb-precipitation-induced injection of Si self-interstitials in Si

被引：7

作者：

Gaiduk, P ^{[1
]}

Fage-Pedersen, J ^{[1
]}

Hansen, JL ^{[1
]}

Larsen, AN ^{[1
]}

机构：

[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.59.7278

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The issue of point-defect injection during antimony precipitation in silicon is addressed in the present investigation. By studying the effect of Sb precipitation in an Sb-box distribution on the diffusion of B or Sb in deeper-lying spikes it is unambiguously concluded that Si self-interstitials are injected during the precipitation process. Possible causes of the self-interstitial injection are discussed. [S0163-1829(99)09411-4].

引用

页码：7278 / 7281

页数：4

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