Sn-background-induced diffusion enhancement of Sb in Si

被引：6

作者：

Fage-Pedersen, J ^{[1
]}

Larsen, AN

Gaiduk, P

Hansen, JL

机构：

[1] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[2] Royal Inst Technol, S-16440 Kista, Sweden

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.81.5856

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The diffusion of Sb in Si has been studied as a function of Sn-background concentration, and enhanced Sb diffusion is observed for backgrounds higher than C-Sn' approximate to 5 x 10(19) cm(-3). This concentration for the onset of enhanced diffusion is significantly lower than in other reports of high-concentration vacancy-mediated diffusion in Si. These reports, however, have up to now been concerned with donor impurities, whereas Sn is an electrically neutral impurity. Some Sn precipitation occurred, and the influence upon the diffusion is estimated from experiment to be small. A number of proposed models of high-concentration diffusion are discussed on the basis of the data.

引用

页码：5856 / 5859

页数：4

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