DIFFUSION OF ELECTRICALLY ACTIVE SB ATOMS IN HEAVILY-DOPED SILICON - MONTE-CARLO SIMULATION WITH REGARD TO COLLECTIVE PHENOMENA

The mechanisms of electrically active impurity diffusion in heavily doped silicon during rapid thermal annealing (RTA) are considered. A computer simulation of impurity atom migration processes in the silicon lattice by the Monte-Carlo (MC) method with regard of collective phenomena is carried out. On the basis of the comparison with experimental results on RTA of Sb impurity implanted into Si in a wide temperature region (from 1000 to 1200 degrees C) conclusions about the nature of the interaction between impurity atoms and defects are made. A good correspondence between the calculated and experimental results is achieved by the modification of the model with regard of the nonequilibrium vacancy distribution in the lattice.