DIFFUSION OF ION-IMPLANTED SN AND SB IN HEAVILY DOPED N-TYPE SILICON

被引：19

作者：

ANDERSEN, PE ^{[1
]}

LARSEN, AN ^{[1
]}

TIDEMANDPETERSSON, P ^{[1
]}

WEYER, G ^{[1
]}

机构：

[1] CERN,ISOLDE COLLABORAT,CH-1211 GENEVA 23,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.99823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：755 / 757

页数：3

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