共 18 条
[2]
BUEHLER MG, 1966, SEL66064 STANF RES R
[3]
BUSEN KM, 1966, T METALL SOC AIME, V236, P306
[4]
CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
[J].
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS,
1967, 55 (12)
:2192-+
[5]
TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION-IMPLANTED SILICON
[J].
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS,
1974, 7 (09)
:698-700
[6]
DEARNALEY G., 1973, ION IMPLANTATION
[7]
DUFFEK EF, 1965, ELECTROCHEM TECHNOL, V3, P75
[10]
ANOMALOUS DIFFUSION IN PHOSPHORUS IMPLANTED SILICON
[J].
RADIATION EFFECTS LETTERS,
1982, 68 (02)
:39-44